| PART |
Description |
Maker |
| BB1 BB1A4A BB1A4M BB1L3N BB1A3M BB1F3P BB1J3P BB1L |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
Hybrid transistor
|
NEC Corp.
NEC[NEC]
|
| GA1A4Z GA1A4Z-T2 GA1A4ZL69-T1 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 323
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR SUPER MINIMOLD PACKAGE-3
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
Hybrid transistor
|
NEC, Corp.
|
| FA1F4Z FA1F4ZL65 FA1F4Z-L FA1F4Z-T2B |
Compound transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
TRANSISTOR | 60V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC Corp.
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| ZXT11N15DF ZXT11N15DFTC ZXT11N15DFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
15V NPN SILICON LOW SATURATION TRANSISTOR
NPN Low Sat Transistor
|
Diodes, Inc.
Diodes Incorporated
Zetex Semiconductors
|
| MC79L0006 MMBT5551-A-AE3-E-R MMBT5551-X-AE3-6-R MM |
PNP EXPITAXIAL PLANAR TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| FN1A4Z FN1A4Z-L FN1A4Z-T2B FN1A4ZM69 |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD
Compound transistor
|
Honeywell International, Inc.
NEC
|
| KTC1008 KTC1008GR KTC1008-15 |
EPITAXIAL PLANAR NPN TRANSISTOR
General Purpose Transistor
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| 2N2060A |
Dual Amplifier Transistor（Small Signal Dual Transistor in a TO-77 Hermetic Package具有放大器功能的双晶体管（TO-77封装两个小信号晶体管 双放大器晶体管（双小信号晶体管采用TO - 77气密封装）（具有放大器功能的双晶体管（至77封装两个小信号晶体管））
DUAL AMPLIFIER TRANSISTOR 500 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-002AF
|
Central Semiconductor, Corp.
TT electronics Semelab, Ltd.
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| CP611 |
Power Transistor PNP - Amp / Switch Transistor Chip
Chip Form: SILICON TRANSISTOR
|
Central Semiconductor Corp
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| IPB80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19 |
80 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
INFINEON[Infineon Technologies AG]
|
